A listing of on semiconductors productpatent coverage may be accessed at. Free packages are available maximum ratings rating symbol value unit collector. Please consult the most recently issued document before initiating or completing a design. Toshiba transistor silicon npn epitaxial type pct process. Isc isc silicon npn power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. It will still get your rf signal quit far and i advice you to use a good 50 ohm resistor as dummy load. Ordering information note 4 device packaging shipping.
General purpose plastic rectifier 1n4001 thru 1n4007 vishay general semiconductor features low forward voltage drop low leakage current. Page 2 of 2 germanium glass diode 1n34a dimensions in how to contact us. Kingtronics produce and sell many different kinds of diodes and rectifiers, general purpose diode m7, 1n4007, 1n5408, switching diodes ll4148, zener diodes bzv55c, fast recovery diodes etc. Symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007. Audio and general purpose symbol vcbo vceo vebo ic ib pc tj tstg ratings 200 140 6 10 4 100tc25c. The product status of devices described in this document may have changed since this document was published and may differ in case of multiple devices. Semiconductor reserves the right to make changes at any time without notice in order to improve design.
General purpose plastic rectifier 1n4001 thru 1n4007 vishay general semiconductor features low forward voltage drop low leakage current high forward surge capability solder dip 275 c max. Outline component pitch a inner tape pitch b cumulative pitch tolerance do41 5. Datasheet contains the design specifications for product development. C 0 20 40 60 80 100 120 140 percent of rated peak reverse voltage % figure 4. I ordered some 1n4001 diodes and they gave me 1n4007, i put it in a regulator circuit where in the schematic it was a 1n4001, and the diode burned out. Its blocking voltage varies from 50 volts 1n4001 to volts 1n4007.
Page 5 of 6 axial lead taping specifications axial lead devices are packed in accordance with eia standard rs296e and specifications given below. Panjit plastic silicon rectifiervoltage 50 to volts current 1. Elektronische bauelemente npn plastic encapsulated transistor 17feb2011 rev. N4001 diode power supply 12v 1a mc7918 datasheet ka7912 voltage regulator n4001 mc7905 mc79xx mc79xxct. Vceo 50 v min, ic 150 ma max excellent hfe linearity. C 1n4001 1n4007 general purpose rectifiers glass passivated absolute maximum ratings t a 25c unless otherwise noted these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. C 1n40011n4007 general purpose rectifiers glass passivated 3. Mitsubishi rf power transistor 2sc1970 npn epitaxial planar type description 2sc1970 is a silicon npn epitaxial planar typ e transistor designed fo r rf power am plifiers on v h f band m obile radio applications. To tune this amplifier you can either use a power meterwattmeter, swr unit or you can do using a rf field meter. High, serviceability of any semiconductor device may by impaired. Toshiba transistor silicon npn epitaxial type pct process 2sc1815 audio frequency general purpose amplifier applications driver stage amplifier applications high voltage and high current. Rectifiersrugged glass package, using a high temperature alloyed construction. Axial lead solderable per milstd202, method 208 guaranteed. Nxp semiconductors product data sheet highspeed diodes 1n4148.
Symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007 unit. C1 1n4001 1n4007 general purpose rectifiers absolute maximum ratings t a 25c unless otherwise noted these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Typical characteristics forward current derating curve ambient temperature c forward current a forward characteristics forward voltage v forward current a nonrepetitive surge current number of cycles at 60hz forward surge current a pk. On semiconductor 09ddj7ucy7raey5779qx3p9aht3y datasheet pdf. Reverse current vs reverse voltage 1n40011n4007, rev. Jan 19, 2014 nonrepetitive surge current 2001 fairchild semiconductor corporation tj 150. Inchange semiconductorproduct specificationsilicon npn power transistors2sc1904descriptionwith to126 packagecomplement to type 2sa899applicationsfor high frequency power amplification datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other. Ul flammability classification rating 94v0 moisture sensitivity. Elektronische bauelemente npn plastic encapsulated transistor. Definition of terms datasheet identification product status advance information formative in, 1n4001 1n4007 general purpose rectifiers features a.
Max unit collector cutoff current icbo vcb 120 v, ie 0. Silicon npn power transistors 2sc1173 package outline fig. Npn epitaxial planar typefor rf power amplifiers on vhf band mobile radio applications online from elcodis, view and download 2sc1970 pdf datasheet, transistors specifications. This data sheet provides information on subminiature size, axial lead mounted. Nec npn silicon power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. All the part names for which the file 09ddj7ucy7raey5779qx3p9aht3y. Diffused junction low forward voltage drop high current capability high surge current capability rohs compliant mechanical data. General purpose plastic rectifier 1n4001 thru 1n4007 vishay. Pdf 1n4001 l1n4007l do41 n4001l n4002l n4003l n4004l n4005l n4006l n4007l d74025 n4001 diode diode n4007 n4007 diode diode n4001 n4004 diode n4005 n4002 diode n4007 diode 1n4001 specifications n4003.
Transistor 2sc17, 2sc18 silicon npn epitaxial planer type for lowfrequency power amplification and driver amplification unit. Silicon npn power transistors 2sc1173 description with to220 package complement to type 2sa473 collector current. This jedec device number series is available in the do41 axial package, and similar diodes are available in sma and melf surface mount packages in. Applications low frequency power amplifier power regulator pinning pin description 1 base 2 collector. This rf power amplifier is based on the transistor 2sc1970 and 2n4427. The cathode is marked on the body of a diode by a band as shown below. Find the pdf datasheet, specifications and distributor information.
Nov 07, 2009 whats the difference between 1n4001 and 1n4007 diodes. Click on an alternate part number to view part details, or select up to 4 parts to compare sidebyside. Absolute maximum ratings and electrical characteristics. To220 plasticencapsulate transistors 2sc2073 transistor npn features power dissipation p cm. In the schematic symbol, the tip of the triangle with the line on top of it is the cathode. Inchange semiconductor isc product specification isc silicon npn power transistor 2sc1970 description high power gain.
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